CSD86336Q3DT
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likeCSD86336Q3DT
Brand：TI
Model：CSD86336Q3DT
stock：27178
Store：ShenZhen/Hongkong
DataSheet：
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Price：1+
￥2.58
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| Installation type | Surface mount |
| packing | TR,CT |
| series | NexFET™ |
| Part status | On sale |
| working temperature | -55°C ~ 125°C |
| Encapsulation/Housing | 8-PowerTDFN |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 6W |
| FET Type | 2 N channels(half-bridge) |
| Drain source voltage (Vdss) | 25V |
| Current at 25 ° C - continuous drain (Id) | 20A(Ta) |
| On resistance (maximum) for different Ids and Vgs | 9.1 mΩ @ 20A,5V,3.4 mΩ @ 20A,5V |
| Vgs (th) (maximum) for different Ids | 1.9V @ 250µA,1.6V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 3.8nC @ 45V,7.4nC @ 45V |
| Input capacitance at different Vds (Ciss) (maximum) | 494pF @ 12.5V,970pF @ 12.5V |
| FET function | Logic level gate,5V drive |
Common problem
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